| PART |
Description |
Maker |
| N02L163WC2AT2 N01L163WC2AB2-55I N01L163WC2AB-55I N |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 】 16 bit
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| N02L6181AB27I N02L6181AB27IT N02L6181AB7IT N02L618 |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
|
ON Semiconductor
|
| N02L83W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx8 bit
|
ON Semiconductor
|
| N02M083WL1AN-70I N02M083WL1A N02M083WL1AD N02M083W |
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| HY62UF16201A |
Super Low Power Slow SRAM - 2Mb
|
Hynix Semiconductor
|
| HY62LF16206A |
Super Low Power Slow SRAM - 2Mb
|
Hynix Semiconductor
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| 27C512A-90/J 27C512A-90/K 27C512A-70/J 27C512A-70/ |
Single/Dual/Quad, 28MHz, Low-Noise, Low-Voltage, Precision Op Amps
500MHz, Low-Power Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
Evaluation Kit for the MAX4104, MAX4105, MAX4304, MAX4305
Micropower, SOT23, Rail-to-Rail, Fixed-Gain GainAmp Open-Loop GainAmps Op Amps
400MHz, Ultra-Low-Distortion Op Amps
x8 EPROM x8存储
330MHz Buffered Video Switches Crosspoint Building Blocks x8存储
350MHz, Ultra-Low-Noise Op Amps x8存储
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers x8存储
|
Integrated Device Technology, Inc.
|
| SIT1534 |
Ultra-Small, Ultra-Low Power 1 Hz ?32.768 kHz Programmable Oscillator
|
SiTime Corp.
|
